Atomic layer deposition supercycle approach applied to the Al-doping of nearly saturated ZnO surfaces

Current research on transparent conductive oxides deals with the development of environmentally friendly materials having competitive electrical and optical properties. Also, synthesis methods need to be compatible state-of-the-art microelectronics miniaturization. ZnO films doped Al (AZO) via Atomic Layer Deposition (ALD) have been subjected thorough investigation for latter. However, conventional doping schemes in ALD seem reached their limit alternative approaches are currently being explored. This work contributes improvement Al-doping efficiency by supercycle approach, applying doping-cycle nearly saturated surfaces. The (? = 1.3 × 10?3 ?cm, n 3.79 1020 cm?3, ? 12.3 cm2/Vs) (%T > 75) properties demonstrated typical values obtained others methodology. main finding this is trend observed properties, which suggests that solubility was not as a result interaction between dopant agent also evidence atoms do become inactive once compensation effect substitutional structural defects, has established. These results open possibility exploring incorporation more into structure following optimizing scheme used here, at same time, promises could substitute indium-tin-oxide many optoelectronic applications, attending well-known environmental economic issues.